ITO110 nm coating
示例数据,最近更新 09:30
制程路径
选择节点查看当前工艺窗口与设备状态。
良率与缺陷定位
所有数值均为演示数据,可替换为实际 MES、SPC 或 Excel 数据。
批次良率趋势
控制线与目标线对照
缺陷 Pareto
按影响片数排序
膜阻均匀性
SP-02 腔体内玻璃基板测点
KEY FINDING
颗粒缺陷集中于 SP-02
SP-02 贡献了 43% 的颗粒缺陷,腔体清洁后首批风险最高。
- 相关参数
- Base pressure
- 影响批次
- 7 lots
- 建议动作
- 调整 seasoning recipe
项目证据
以下数据与改善结果均来自模拟场景。
模拟改善结果
Overall yield92.8%95.1%+2.3 pp
Defect rate4.6%2.9%-37%
Process Cpk1.081.42+0.34
定位时间120 min35 min-71%
Resume-ready summary
- Developed a responsive ITO process-analysis application using 12,480 simulated manufacturing records.
- Implemented yield trending, defect Pareto, process capability monitoring, and resistance heatmaps.
- Reduced the simulated analysis path from 11 interactions to 4.